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| LED - Lamp 16.11.2007 Radiation Infrared Type DDH Technology AlGaAs/AlGaAs ELD-810-095-3 rev. 03 Case TO-46 Description High-power, high-speed infrared LED in hermetically sealed TO-46 package, mounted on reflector header for beam forming O 0,45 0.04 O 5,40 0,1 0,60 0,15 O 4,0 0,1 Anode O 4,65 0,08 2,54 0,15 0,28 Note: Special packages with standoff available on request Applications Chip Location Cathode 1,2 40,0 1,0 2,8 0,15 TO-46C + TL CAN Optical communications, safety equipment, automation, optical sensors, encoders Maximum Ratings Tamb = 25C, unless otherwise specified Parameter Forward current (DC) Peak forward current Power dissipation Operating temperature range Storage temperature range Junction temperature (tP 50 s, tP /T = 1/2) Test onditions Symbol IF IFM PD Tamb Tstg TJ Value 100 200 220 -40 to +100 -55 to +100 100 Unit mA mA mW C C C Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions IF = 20 mA Forward voltage Forward voltage* Reverse voltage Radiant power Radiant power* Radiant intensity Radiant intensity* Peak wavelength Spectral bandwidth at 50% Viewing angle Switching time *measured after 30s current flow Symbol VF VF VF e e e e p 0.5 tr, tf Min Typ 1.6 1.7 Max 1.9 Unit V V V mW mW mW/sr mW/sr IF = 100 mA IR = 10 A IF = 20 mA IF = 100 mA IF = 20 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA 5 1.5 1.5 800 2.5 10 2 8 810 35 90 40 820 nm nm deg. ns Note: All measurements carried out on EPIGAP equipment We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 |
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